BD250C PNP Bipolar Transistor for High Power Switching
Features:
-
High Collector Current: Capable of handling up to 25 A of continuous collector current, suitable for demanding power applications.
-
Power Dissipation: Designed to dissipate up to 125 W at a case temperature of 25°C, ensuring reliable operation under substantial power loads.
-
Package Type: Housed in a TO-3PN package, the BD250C offers robust thermal performance and ease of mounting.
Specifications:
- Type Designator: BD250C
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 125 W
- Maximum Collector-Emitter Voltage |Vcer| ((RBE= 100Ω): 115 V
- Maximum Collector-Emitter Voltage |Vceo|: 100 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Collector Current-Continuous |Ic max|: 25A
- Maximum Collector Current |Ic max|: 40 A
- Max. Operating Junction Temperature (Tj): 150 °C
Applications:
-
Power Amplifiers: Ideal for use in audio and RF power amplification circuits where high current handling is essential.
-
Switching Regulators: Suitable for power regulation applications requiring efficient switching and high current capacity.
-
Motor Drivers: Effective in driving motors in industrial and automotive applications due to its high current capability.
