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IRFB4110 N-Channel MOSFET Transistor 100V 180A TO-220

The IRFB4110 N-Channel MOSFET (100V, 180A, TO-220) offers high current handling, low on-resistance, fast switching for efficient power conversion switching.

65.00 EGP

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SKU:3496300107148
IRFB4110 N-Channel MOSFET Transistor 100V 180A TO-220

The IRFB4110 is a high-performance N-channel MOSFET designed for demanding power switching applications. Housed in a TO-220 package, this MOSFET offers a drain-to-source voltage rating of 100V and can handle up to 180A of continuous drain current, making it ideal for high-current circuits such as motor drives, DC-DC converters, power supplies, and battery-powered systems. With a low value, the IRFB4110 ensures minimal conduction losses, improving overall efficiency in power-sensitive designs. It features fast switching speeds and rugged avalanche characteristics, enhancing performance in high-frequency applications. The TO-220 package provides excellent thermal conductivity, allowing for effective heat dissipation with the use of a heatsink. Overall, the IRFB4110 is a reliable and efficient choice for engineers looking for a powerful N-channel MOSFET capable of handling high current and voltage in a compact, easy-to-mount package.

Features:
  • The IRFB4110 is a silicon-based, N-channel MOSFET designed to handle high currents and voltages.
  • High Current Capability: Can handle continuous drain currents up to 180A.
  • High Voltage Rating: Drain-to-source voltage (VDS_{DS}DS​) of up to 100V.
  • The transistor is housed in a TO-220 package, this design focuses on achieving high power efficiency through low RDS(on)_{DS(on)}DS(on)​ and minimizing heat dissipation.
  • Fast Switching: Optimized for high-speed operation in demanding circuits.
  • High Power Density: Supports compact and efficient designs.
  • low on-resistance, high efficiency, and fast switching, making it suitable for various power management and electronic switching circuits.
  • This device is ideal for DC-DC converters, motor drives, power supplies, and battery management systems.
Pin Configuration:

 

Specifications:
DatasheetIRFB4110
ModelIRFB4110
Product TypeMOSFETs
Channel ModeEnhancement
ConfigurationSingle
Transistor Type1 N-Channel
Number of Channels1 Channel
Mounting StyleThrough Hole
Package/CaseTO – 220
Vds-Drain-Source Breakdown Voltage100 V
Id-Continuous Drain Current180 A
Rds On-Drain-Source Resistance4.5 mΩ
Vgs-Gate-Source Voltage– 20 V, + 20 V
Operating Temperature– 55 °C  to + 175 °C
Pd-Power Dissipation370 W
Fall Time88 ns
Rise Time67 ns
Typical Turn-Off Delay Time78 ns
Typical Turn-On Delay Time25 ns
Applications:
  • DC-DC converters.
  • Switched-mode power supplies (SMPS).
  • Motor control circuits.
  • Uninterruptible power supplies (UPS).
  • Renewable energy systems (e.g., solar inverters).
  • High-power battery management.
  • Hard switched and High frequency circuits.
Datasheet:

IRFB4110

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