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TDA9105 Deflection Processor for Multi-Sync Monitors 12V 40mA IC DIP-42 (Wide)
55.00 ج.م55.00 ج.م× -
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20N120 IGBT Power Transistor 1200V 20A TO-247
The 20N120 is a high-voltage N-channel IGBT designed for power switching applications such as inverters, induction heating systems, and UPS power supplies.
65.00 ج.م
متوفرالكود 3496300158126
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20N120 IGBT Power Transistor 1200V 20A TO-247
The 20N120 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current switching applications. It features a 1200 V collector-emitter voltage rating and supports a continuous collector current of up to 40 A at 25°C and 20 A at 100°C. The device has a typical collector-emitter saturation voltage of 1.8 V at 20 A and 25°C.
The device uses FS Technology and is designed with low gate charge characteristics, making it suitable for efficient power switching. It is specified for applications including general-purpose inverters, induction heating, and UPS systems. The 20N120 is available in a TO-247 package under the 20N120C marking.
Features:
- N-channel IGBT.
- High-voltage switching capability.
- Low gate charge.
- FS Technology.
- Suitable for high-power switching applications.
- RoHS product.
- Available in TO-247 package.
Specifications:
| Parameter | Specification |
|---|---|
| Device Type | N-Channel IGBT |
| Marking | 20N120 |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) @ 25°C | 40 A |
| Continuous Collector Current (IC) @ 100°C | 20 A |
| Pulsed Collector Current (ICM) | 60 A |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Gate Threshold Voltage | 4.5–6.5 V |
| Collector-Emitter Saturation Voltage | 1.8 V. @ 20 A, 25°C |
| Collector-Emitter Saturation Voltage @ 125°C | 2.0 V. |
| Collector-Emitter Saturation Voltage @ 150°C | 2.1 V. |
| Power Dissipation | 150 W |
| Operating / Storage Temperature | -55°C to +150°C |
| Input Capacitance (Ciss) | 1600 pF. / 2400 pF max. |
| Output Capacitance (Coss) | 120 pF. / 190 pF max. |
| Reverse Transfer Capacitance (Crss) | 84 pF. / 130 pF max. |
| Total Gate Charge (Qg) | 120 nC |
| Turn-On Delay Time | 85 ns |
| Turn-On Rise Time | 180 ns |
| Turn-Off Delay Time | 360 ns |
| Turn-Off Fall Time | 100 ns |
| Turn-On Energy | 1.8 mJ |
| Turn-Off Energy | 1.1 mJ |
| Total Switching Energy | 2.9 mJ |
| Package | TO-247 |
| Device Weight | 6 g. |
Pinout:
| Pin Number | Name | Description |
|---|---|---|
| 1 | G | Gate |
| 2 | C | Collector |
| 3 | E | Emitter |
Applications:
- General-purpose inverters.
- Induction heating (IH).
- UPS power supplies.
- High-voltage power switching.
- Power conversion circuits.
Package Included:
- 1 × 20N120 IGBT Power Transistor 1200V 20A TO-247.
Documents:
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