BD650 PNP Transistor 100V 8A
The BD650 PNP Transistor is a high-performance silicon Darlington transistor engineered for demanding electronic applications requiring robust power handling. With a maximum collector-emitter voltage of 100V and a continuous collector current of 8A, this transistor is capable of managing significant power loads, up to 62.5W at a case temperature of 25°C. Its Darlington configuration provides a high DC current gain of 750, enabling efficient load driving with minimal base current, which is particularly advantageous in applications where power efficiency is critical.
Housed in a TO-220 package, the BD650 is designed for straightforward integration into various circuit designs. The package’s through-hole mounting facilitates easy installation on printed circuit boards (PCBs) or heat sinks, ensuring effective thermal management during operation.
Features:
- High Voltage Capacity Can handle up to 100V across collector-emitter.
- Strong Current Handling Supports up to 8A of continuous collector current.
- High Gain Provides excellent amplification with a current gain of up to 750.
- Low Saturation Voltage Ensures efficient performance with minimal voltage loss (V<sub>CEsat</sub> = 2.0V at 3A).
- Complementary Transistor Pair Pairs with the NPN transistor BD649 for balanced operation in circuits.
Specifications:
- Type: PNP
- Collector-Emitter Voltage, max: 100V
- Collector-Base Voltage, max: 120V
- Emitter-Base Voltage, max: 5V
- Collector Current − Continuous, max: 8A
- Collector Dissipation: 62.5W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: 65 to +150 °C
- Package: TO-220
Pin Configuration:
Applications:
- Audio power amplifiers, particularly in output stages.
- General-purpose switching circuits.
- Motor control and driver circuits.
- Power supply regulation and control.
