BU2520DF NPN Power Transistor SOT199

Specifications:

• Type Designator: BU2520DF
• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 45 W
• Collector-emitter voltage peak value: 1500 V
• Collector-emitter voltage (open base): 800 V
• Collector-emitter saturation voltage: 5 V
• Maximum Collector Current |Ic max|: 10 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Collector Capacitance (Cc): 115 pF
• Forward Current Transfer Ratio (hFE), MIN: 5
• Package: SOT199

Datasheet