Specifications:
- Type Designator: BU2520DF
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 45 W
- Collector-emitter voltage peak value: 1500 V
- Collector-emitter voltage (open base): 800 V
- Collector-emitter saturation voltage: 5 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Collector Capacitance (Cc): 115 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: SOT199
