The BUW12A is a high-performance Silicon NPN Power Transistor, housed in a standard TO-3PN package. It features high voltage rating capabilities, fast switching speed, and low collector saturation voltage, making it ideally suited for demanding switching and industrial electronic applications.
Features
- High Voltage Capability
- Fast Switching Speed
- Low Saturation Voltage
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Symbol |
Parameter |
Conditions |
Value |
Unit |
| VCBO |
Collector-Base Voltage |
Open Emitter |
1000 |
V |
| VCEO |
Collector-Emitter Voltage |
Open Base |
450 |
V |
| VEBO |
Emitter-Base Voltage |
Open Collector |
9 |
V |
| IC |
Collector Current |
Continuous |
8 |
A |
| ICM |
Collector Current (Peak) |
Peak |
20 |
A |
| IB |
Base Current |
Continuous |
4 |
A |
| PT |
Total Power Dissipation |
Tc = 25°C |
125 |
W |
| Tj |
Junction Temperature |
— |
150 |
°C |
| Tstg |
Storage Temperature |
— |
-65 to 175 |
°C |
Thermal Characteristics
| Symbol |
Parameter |
Max |
Unit |
| Rth j-c |
Thermal Resistance, Junction to Case |
1.2 |
°C/W |
Electrical Characteristics (Tj = 25°C unless specified)
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VCEO(SUS) |
Collector-Emitter Sustaining Voltage |
IC = 0.1A; IB = 0; L = 25mH |
450 |
— |
V |
| VCEsat |
Collector-Emitter Saturation Voltage |
IC = 6A; IB = 1.2A |
— |
1.5 |
V |
| VBEsat |
Base-Emitter Saturation Voltage |
IC = 6A; IB = 1.2A |
— |
1.5 |
V |
| ICES |
Collector Cut-Off Current |
VCE = 1000V; VBE = 0 |
— |
1.0 |
mA |
| IEBO |
Emitter Cut-Off Current |
VEB = 9V; IC = 0 |
— |
10 |
mA |
| hFE |
DC Current Gain |
VCE = 5V; IC = 1A |
15 |
50 |
— |
Switching Times (Resistive Load)
Conditions: VCC = 240V, IC = 6A, IB1 = -IB2 = 1.2A
| Symbol |
Parameter |
Max |
Unit |
| ton |
Turn-on Time |
1.0 |
µs |
| ts |
Storage Time |
4.0 |
µs |
| tf |
Fall Time |
0.8 |
µs |
Applications
- Specially intended for operating in industrial applications.
Package Content
- 1 x BUW12A NPN Power Transistor 1000V 8A TO-3PN
DataSheet
