FQA22N60 N-Channel MOSFET Transistor 600V, 22A TO-3PN
FQA22N60 N-Channel MOSFET Transistor 600V 22A TO-3PN is a high-voltage power MOSFET designed for efficient switching and power conversion applications. It features a 600V drain-to-source voltage rating, 22A continuous drain current capability, and a TO-3PN through-hole package. The device is suitable for high-power switching circuits where high voltage blocking capability and low conduction losses are required.
Features:
- N-Channel power MOSFET.
- 600V drain-to-source voltage rating.
- 22A continuous drain current at Tc=25°C.
- 66A pulsed drain current.
- ±30V maximum gate-to-source voltage.
- 165mΩ maximum drain-source on-state resistance.
Specifications:
| Parameter | Value |
|---|---|
| Product Type | N-Channel MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 22A@Tc=25°C |
| Continuous Drain Current | 13.8A@Tc=100°C |
| Pulsed Drain Current | 66A |
| Gate-Source Voltage | ±30V |
| Drain-Source On-State Resistance | 165mΩmax.@11A,10V |
| Typical Drain-Source On-State Resistance | 140mΩ@11A,10V |
| Typical Gate Charge | 45nC@10V |
| Power Dissipation | 205W@Tc=25°C |
| Junction-to-Case Thermal Resistance | 0.61°C/W |
| Case-to-Heat-Sink Thermal Resistance | 0.24°C/W |
| Operating Temperature | -55 to +150°C |
| Storage Temperature | -55 to +150°C |
| Avalanche Energy | 672mJ |
| Avalanche Current | 7.3A |
| MOSFET dv/dt | 100V/ns |
| Peak Diode Recovery dv/dt | 20V/ns |
| Package | TO-3PN |
| Number of Pins | 3 |
| Mounting Type | Through-Hole |
Pin Configuration:
Applications:
- Switching power supplies.
- AC-DC power supplies.
- Power-factor correction circuits.
- Solar inverters.
- Industrial power supplies.
- High-frequency power converters.
- Inverter circuits.
- Server and telecommunications power supplies.
- FPD TV power supplies.
- ATX power supplies.
- General-purpose high-voltage switching circuits.
Package Include:
1x FQA22N60 N-Channel MOSFET Transistor 600V, 22A TO-3PN.
