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FQPF50N60 N Channel MOSFET Transistor TO-220

The FQPF50N60 N-Channel MOSFET is a 600V transistor offering low gate charge and fast switching, ideal for efficient power supplies.

20.00 ج.م

متوفرالكود 3496300124572
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الكود:3496300124572
FQPF50N60 N Channel MOSFET Transistor TO-220

The FQPF50N60 is a 600V N-Channel MOSFET transistor produced using advanced planar stripe DMOS technology. This technology is designed to minimize on-state resistance and provide superior switching performance, making it ideal for power electronics applications. The device is engineered to withstand high-energy pulses, both in avalanche and commutation modes, ensuring its robustness in challenging operational conditions.

This MOSFET features a low gate charge, allowing for efficient switching, and is capable of withstanding high voltages. Its low on-resistance ensures minimal power loss during operation, which is a critical factor in power electronics. Additionally, the device has been rigorously tested for avalanche performance, offering improved safety and reliability. The FQPF50N60 is also known for its excellent dv/dt capability, which allows it to handle fast switching speeds without compromising its stability.

Designed for high-efficiency switch mode power supplies, this MOSFET excels in environments where efficiency and reliability are paramount. The FQPF50N60’s characteristics make it suitable for a range of industrial, automotive, and general-purpose applications, providing consistent performance across various systems requiring power conversion.

Features:
  • Low Gate Charge .
  • Low On-Resistance (2.0Ω at VGS = 10V).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • TO-220F Package with 4.0kV Isolation.
Specifications:
Parameter Value
Drain-Source Voltage (VDSS): 600V
Drain Current (ID): 2.8A
Pulsed Drain Current (IDM): 11.2A
Gate-Source Voltage (VGSS): ±30V
Single Pulsed Avalanche Energy (EAS):       300mJ
Power Dissipation (PD): 40W
Thermal Resistance (RθJC): 3.13°C/W
Thermal Resistance (RθJA): 62.5°C/W
Gate Threshold Voltage (VGS(th)): 3.0-5.0V
On-Resistance (RDS(on)): 1.57-2.0Ω
Gate Charge (Qg): 16-20nC
Pinout Diagram:

Applications:
  • High-Efficiency Power Supplies.
  • Automotive Systems.
  • Motor Control Systems.
  • Power Conversion Circuits.
  • Inductive Load Switching.
Package Contents:
  • 1x FQPF50N60 N Channel MOSFET Transistor TO-220
Datasheet
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