The BLG40T65FUK is a high-performance IGBT manufactured using advanced Trench Field Stop (T-FS) technology. This technology provides the device with a low collector-emitter saturation voltage (VCE(sat)), optimized switching performance, and a low gate charge (Qg). It is designed as a highly efficient and reliable component for power conversion and high-frequency switching applications.
✅Features
- Technology: Advanced Trench Field Stop (T-FS) technology.
- Switching Speed: Fast switching capability for reduced power loss.
- Saturation Voltage: Low VCE(sat) for improved efficiency.
- Thermal Stability: Features a positive temperature coefficient.
- Integrated Diode: Includes a fast recovery anti-parallel diode.
- Compliance: RoHS compliant product.
📜📚Specifications
Absolute Maximum Ratings (TC = 25°C)
| Collector-Emitter Voltage (VCES) |
650 |
V |
| Gate-Emitter Voltage (VGES) |
±30 |
V |
| Continuous Collector Current (TC = 25°C) |
80 |
A |
| Continuous Collector Current (TC = 100°C) |
40 |
A |
| Pulsed Collector Current (ICM) |
160 |
A |
| Diode Continuous Forward Current (TC = 25°C) |
40 |
A |
| Short Circuit Withstand Time (tsc) |
3.0 |
µs |
| Power Dissipation (PD) |
298 |
W |
| Operating Junction Temperature (TJ) |
-55 to 175 |
°C |
Static Characteristics
| Collector-Emitter Saturation Voltage (VCE(sat)) |
1.55 (Typ) / 1.95 (Max) |
V |
| Gate Threshold Voltage (VGE(th)) |
4.8 to 6.2 (5.5 Typ) |
V |
| Collector-Emitter Leakage Current (ICES) |
4.0 (Max) |
µA |
| Gate-Emitter Leakage Current (IGES) |
200 (Max) |
nA |
Dynamic & Thermal Characteristics
| Input Capacitance (Ciss) |
2225 |
pF |
| Total Gate Charge (Qg) |
110 |
nC |
| Thermal Resistance, Junction-to-Case (RθJC) |
0.5 |
°C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) |
40 |
°C/W |
💻Applications
- Welding Converters
- Uninterruptible Power Supplies (UPS)
- Boost Choppers
- Air Conditioning systems
- High switching frequency applications
🎁Package Content
- 1 x G40T65FUK IGBT Transistor 650V 80A TO-247
📖DataSheet
