FF200R12KE3_B2 1.05kW 295A 1200V IGBT Transistor Module

FF200R12KE3_B2 1.05kW 295A 1200V IGBT Transistor Module

The FF200R12KE3B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies, engineered to meet the demands of high-power industrial applications. This dual IGBT module is designed with a collector-emitter voltage rating of 1200V and a continuous DC collector current of 295A at a case temperature of 25°C (200A at 80°C), making it capable of handling significant power loads. The module’s total power dissipation is rated at 1050W, ensuring stable operation under high-load conditions.

Features:

• High collector-emitter voltage rating of 1200V.
• Continuous collector current of 295A.
• Isolated baseplate for enhanced electrical insulation.
• Fast switching capability for reduced switching losses.
• Integrated freewheeling diode for efficient operation.
• Optimized thermal performance for high-power environments.
• Compact, industry-standard housing for easy integration.
• Low conduction and switching losses.
• Suitable for use in harsh and high-demand environments.

Specifications:

Applications:

• Industrial motor drives.
• Power inverters.
• Renewable energy systems such as solar and wind converters.
• Uninterruptible power supplies (UPS).
• Welding equipment.
• Traction and railway converters.
• Power control units in HVAC systems.

Package Include:

1x FF200R12KE3B2 1.05kW 295A 1200V IGBT Transistor Module

Data Sheet:

FF200R12KE3