Power IGBT Transistor G80N60 TO-247 600V 80A

Power IGBT Transistor G80N60 TO-247 600V 80A

The Power IGBT Transistor G80N60 TO-247 600V 80A is a high-performance ultrafast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient switching and high current handling, this device combines a 600 V blocking voltage with an 80 A continuous collector current capability. The TO-247 package facilitates easy integration into various power electronic systems.

Features:

• High-Speed Switching: Enables rapid operation with minimal energy loss.
• Low Saturation Voltage: VCE(sat) of 2.1V at 40A collector current.
• High Input Impedance: Simplifies drive requirements.
• Integrated Fast Recovery Diode: Reverse recovery time (trr) of 50ns.

Specifications:

• Collector-Emitter Breakdown Voltage (VCE(sus)): 600V.
• Gate-Emitter Threshold Voltage (VGE(th)): 6V.
• Maximum Collector Current (IC): 80A at 25°C.
• Maximum Gate-Emitter Voltage (VGE): ±20V.
• Thermal Resistance Junction-to-Case (RθJC): 0.5°C/W.
• Operating Junction Temperature (TJ): -55°C to +150°C.

Pin Configuration:

Applications:

• AC and DC motor controls.
• General-purpose inverters.
• Robotics and servo controls.

Data Sheet:

G80N60