FF200R12KE3_B2 1.05kW 295A 1200V IGBT Transistor Module
The FF200R12KE3B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies, engineered to meet the demands of high-power industrial applications. This dual IGBT module is designed with a collector-emitter voltage rating of 1200V and a continuous DC collector current of 295A at a case temperature of 25°C (200A at 80°C), making it capable of handling significant power loads. The module’s total power dissipation is rated at 1050W, ensuring stable operation under high-load conditions.
Features:
- High collector-emitter voltage rating of 1200V.
- Continuous collector current of 295A.
- Isolated baseplate for enhanced electrical insulation.
- Fast switching capability for reduced switching losses.
- Integrated freewheeling diode for efficient operation.
- Optimized thermal performance for high-power environments.
- Compact, industry-standard housing for easy integration.
- Low conduction and switching losses.
- Suitable for use in harsh and high-demand environments.
Specifications:
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage | 1200V |
| Collector Current (Ic) | 295A |
| Power Rating | 1.05kW |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 2.15 V |
| Gate-Emitter Voltage (Vge) | ±20V |
| Operating Temperature Range | -40°C to 150°C |
| Package Type | IGBT Module |
| Manufacturer | Infineon |
Applications:
- Industrial motor drives.
- Power inverters.
- Renewable energy systems such as solar and wind converters.
- Uninterruptible power supplies (UPS).
- Welding equipment.
- Traction and railway converters.
- Power control units in HVAC systems.
Package Include:
1x FF200R12KE3B2 1.05kW 295A 1200V IGBT Transistor Module
