IRFP9140N P-Channel MOSFET Transistor 100V 0.117Ω 23A TO-247AC
The IRFP9140N is a Fifth Generation HEXFET® Power MOSFET. This P-Channel device utilizes advanced processing techniques to achieve an extremely low on-resistance per silicon area.
This design combines the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are known for, providing designers with an extremely efficient and reliable component.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- P-Channel
- Fast Switching
- Fully Avalanche Rated
- Extremely low on-resistance per silicon area
- Ruggedized device design
Applications
- This device is designed for use in a wide variety of applications. It is particularly well-suited for commercial-industrial applications where higher power levels are necessary and preclude the use of smaller packages like the TO-220.
