IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220
The IRFZ24N is a Fifth Generation HEXFET® power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This component combines fast switching speed with a ruggedized device design, providing designers with an incredibly efficient device for use in a wide variety of commercial and industrial applications.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- High Operating Temperature
- Fast Switching
- Fully Avalanche Rated
Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | 55 | V |
| Continuous Drain Current (@ TC = 25°C) | ID | 17 | A |
| Continuous Drain Current (@ TC = 100°C) | ID | 12 | A |
| Pulsed Drain Current | IDM | 68 | A |
| Max Power Dissipation (@ TC = 25°C) | PD | 45 | W |
| Linear Derating Factor | – | 0.30 | W/°C |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Static Drain-to-Source On-Resistance | RDS(on) | 0.07 | Ω |
| Single Pulse Avalanche Energy | EAS | 71 | mJ |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Thermal Resistance (Junction-to-Case) | RθJC | 3.3 (Max) | °C/W |
Pin Configuration
Applications
- DC-DC Converters
- Motor Control Circuits
- Solenoid and Relay Drivers
- General Purpose Power Switching
