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K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W

The K1916 N-Channel MOSFET offers 450V, 18A handling capacity, fast switching, and low on-resistance, making it ideal for power supplies and amplifiers.

35.00 ج.م

متوفرالكود 3496300084616
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الكود:3496300084616
K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W

The K1916 is an N-channel MOSFET transistor designed for high-voltage, high-power applications. It offers a drain-to-source voltage rating of 450V, making it suitable for demanding environments where high voltage tolerance is required. This transistor is ideal for use in power supplies, amplifiers, and other high-performance circuits due to its high-speed switching capabilities.

One of the key features of the K1916 MOSFET is its ability to handle a continuous drain current of 18A at a junction temperature of 25°C. Its low on-resistance (RDS(on)) of 0.3 to 0.45Ω ensures minimal power loss during operation, contributing to its efficiency. Furthermore, its fast switching characteristics, with a rise time of just 100-150ns, make it highly suitable for switching regulators and other dynamic applications.

The K1916 MOSFET offers excellent reliability with minimal lot-to-lot variations, ensuring consistent performance. It also provides robust protection features, including a maximum junction temperature of 150°C and a wide operating temperature range from -55°C to 150°C. With its thermal resistance ratings, the transistor efficiently manages heat dissipation during high-load operations, enhancing its long-term durability.

Features:
  • High Drain-Source Voltage: 450V for demanding power applications.
  • Fast Switching Speed: Provides efficient performance in dynamic circuits.
  • Low On-Resistance: 0.3 to 0.45Ω for minimal power loss.
  • Large Continuous Drain Current: 18A at TC = 25°C.
  • Wide Temperature Range: Operating temperature range from -55°C to 150°C.
  • Reliable Performance: Minimum lot-to-lot variations.
  • Efficient Heat Dissipation: Thermal resistance ratings for effective cooling.
Specifications:
Specification Details
Drain-Source Voltage (VDSS): 450V
Gate-Source Voltage (VGS): ±30V
Drain Current (ID): 18A at TC = 25°C
Power Dissipation (Ptot): 80W
Junction Temperature (Tj): 150°C
Storage Temperature (Tstg): -55°C to 150°C
Thermal Resistance (Rth j-c): 1.56°C/W
Thermal Resistance (Rth j-a): 30°C/W
Gate Threshold Voltage (VGS(th)): 2.5V to 5V
Drain-Source Breakdown Voltage (V(BR)DSS): 450V
On-Resistance (RDS(on)): 0.3Ω to 0.45Ω
Input Capacitance (Ciss): 1800pF to 2700pF
Output Capacitance (Coss): 270pF to 410pF
Rise Time (tr): 100ns to 150ns
Fall Time (tf): 80ns to 120ns
Applications:
  • Switching Regulators.
  • Uninterruptible Power Supplies (UPS).
  • Power Amplifiers.
  • Power Management Circuits.
  • General-Purpose Switching Applications.
Package Contents:
  • 1x K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W
الوزن 7 جرام
الأبعاد 5 × 15 × 40 ميليميتر
العودة للأعلى
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