Specifications:
- Type Designator: 2SK956
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 150 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on time(ton): 280 nS
- Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
- Package: TO-3P
