MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F
The MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F is an N-Channel enhancement mode power MOSFET designed for high voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current capacity of 20A. The device is built using advanced planar stripe and DMOS technology for robust performance. It offers low on-resistance, fast switching capability, and low gate charge, which contributes to high efficiency and reduced conduction losses in power supply circuits. Packaged in a TO-220 form factor, the MPF20N60 is suitable for use in solar inverters, AC-DC power supplies, and other industrial power applications, ensuring reliable operation with a maximum junction temperature of 150°C. The transistor is widely used in switching power supplies, adaptors, and chargers where high voltage and current handling are required.
Features:
- High Voltage and Current Ratings It has a drain-source voltage of 600V and can handle a continuous drain current of 20A.
- Technology Utilizes advanced planar stripe and DMOS technology for improved performance.
- Low On-Resistance Typical RDS(on) around 150 milliohms, enabling efficient conduction.
- Fast Switching Designed for high-speed switching applications with low gate charge (~75 nC) and low output capacitance (~165 pF).
- Thermal Performance Capable of operating at junction temperatures up to 150°C with a thermal resistance of about 0.6°C/W from junction to case.
- Packaging Comes in a TO-220 package, suitable for efficient heat dissipation.
- Application Suitability Ideal for power supply, inverter, and industrial power applications due to its high voltage, high current capacity, and low switching losses.
Pinout Configuration:
Specifications:
| Parameter | Value | Unit | Notes / Conditions |
| Part Number | MPF20N60 | — | |
| Package Type | TO-220F | — | Fullpack, 3 Lead Package |
| Drain-Source Voltage (V_DSS) | 600 | V | Maximum Drain-Source Voltage |
| Continuous Drain Current (I_D) | 20 | A | At TC=25∘CT_C=25^\circ C=25∘C |
| Power Dissipation (P_D) | 86 | W | MIRACLE POWER rating |
| RDS(on) @ 10V Gate Voltage | 450 | mΩ | Typical on-resistance |
| Gate Threshold Voltage (V_GS(th)) | 4 | V | At 250 µA |
| Type | N-Channel | — | |
| Reverse Transfer Capacitance (C_rss) | 25 | pF | At specified V_DS |
| Output Capacitance (C_oss) | 260 | pF | |
| Input Capacitance (C_iss) | 2.8 | nF | |
| Operating Junction Temperature Range | -55 ~ +150 | °C | |
| Gate Charge (Q_g) | 53.5 | nC | At 10V |
Applications:
- Power Factor Correction (PFC) circuits in switching power supplies.
- Server and Telecom power supply designs.
- Flat Panel Display (FPD) TV power regulators.
- ATX power supplies for personal computers.
- Industrial power control systems.
- Solar inverter circuits.
- AC to DC power converters.
- Switching regulators and high-efficiency power conversion.
- Motor control drives and inverters.
- General purpose high voltage, high current switching applications.
Package Contents:
- 1 x MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F
