P2114AL-3 4Kbit SRAM 150ns IC DIP-18
The P2114AL‑3 is a high-performance, 4 Kbit static random-access memory device organized as 1,024 × 4 bits. Built on asynchronous MOS technology, it offers a maximum access time of 150 ns, supports three-state outputs, and operates from a standard 5 V ±10 % power supply. Packaged in a DIP‑18 form factor, it is designed for embedded and legacy systems requiring fast, reliable SRAM with low latency and minimal control overhead.
Features
- HMOS technology.
- Low power, high speed.
- Identical cycle and access time.
- Single +5V supply ±10%
- High density 18-pin package.
- Completely static memory with no clock or timing strobe required.
- Directly TTL compatible with all I/Os.
- Common data input and output using three-state outputs.
- M2114 upgrade.
- Military temperature range -55 °C ti +125 °C.
- Not recommended for new designs.
Specifications
| Parameter | Value |
|---|---|
| Memory Capacity | 4 Kbit |
| Access Time (max) | 150 ns |
| Current (max) | 50 mA |
| Power Supply Voltage | 5.0 V ±10 % |
| I/O Characteristics | TTL-compatible, three-state outputs |
| Organization | Asynchronous SRAM |
| Package | DIP‑18, through‑hole |
| Logic Interface | Parallel data, separate address lines |
Absolute Maximum Ratings
| Parameter | Value |
|---|---|
| Temperature Under Bias | –65 °C to +135 °C |
| Storage Temperature | –65 °C to +150 °C |
| Voltage on Any Pin With Respect to Ground | –3.5 V to +7 V |
| Power Dissipation | 1.0 W |
| D.C. Output Current | 5 mA |
PINOUT
Applications
- High-speed SRAM buffer or cache memory in legacy microcomputers and custom logic boards.
- Real-time data capture and buffering in industrial control and instrumentation.
- Memory component in vintage game consoles or restoration kits.
- Design projects requiring fast parallel-access low-capacity static RAM.
Documents
NOTE: M2114AL-3 is interchangeable with P2114AL-3.
