Specifications:
- Type Designator: P4NC50FP
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 40 W
- Maximum Drain-Source Voltage |Vds|: 500 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3.5 A
- Maximum Drain Current (pulsed) |Idm|: 14A
- Maximum Junction Temperature (Tj): 150 °C
- Maximum Total Gate Charge (Qg): 17 nC
- Rise Time (tr): 13 nS
- Drain-Source Capacitance (Cd): 52 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm
- Package: TO-220FP
