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Toshiba TC5064BP Hex High-Voltage Buffer with Inhibit 3V to 18V 300mW DIP-16

Toshiba TC5064BP: Hex high-voltage buffer (non-inverting), 3V-18V supply, DIP-16 package. Ideal for driving fluorescent displays and PMOS logic interfacing.

75.00 ج.م

متوفرالكود 3496300155934
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الكود:3496300155934
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Toshiba TC5064BP Hex High-Voltage Buffer with Inhibit 3V to 18V 300mW DIP-16

The TC5064BP is a C2MOS digital integrated circuit containing six non-inverting buffer circuits with open-drain structure outputs. It features two common INHIBIT inputs (AIN, BIN) and is built using high-breakdown-voltage P-channel MOS FETs capable of withstanding up to -50V.

Designed for high-voltage output capabilities, the TC5064BP is an ideal solution for driving fluorescent display tubes and interfacing low-voltage logic with high-voltage MOS LSI circuits.

Features
  • Type: Hex High Voltage Buffer (Non-Inverting Type)
  • High Output Voltage Capability: Features P-channel MOS FETs with open-drain structure capable of -50V breakdown voltage
  • Control Inputs: Includes two common INHIBIT inputs (AIN, BIN)
  • Output Impedance Control: Supports High-Impedance (HZ) state via INHIBIT pin configurations
  • Wide Operating Voltage Range: 3V to 18V
  • Package: 16-pin Dual In-line Package (DIP-16 / 3D16A-P)

Specifications
1. Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
DC Supply Voltage VDD VSS – 0.5 ~ VSS + 20 V
Input Voltage VIN VSS – 0.5 ~ VDD + 0.5 V
Output Voltage VOUT VDD – 50 ~ VDD + 0.5 V
Power Dissipation PD 300 mW
DC Input Current IIN ±10 mA
Storage Temperature Range Tstg -65 ~ 150 °C
Lead Temp. / Time Tsol 260°C · 10sec —
2. Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply Voltage VDD 3 — 18 V
Input Voltage VIN 0 — VDD V
Operating Temperature Topr -40 — 85 °C
3. Key Electrical Characteristics (VSS = 0V)
  • High Level Output Current (IOH): Up to -35mA (at VDD = 15V, VOH = 12V at 25°C)
  • Output OFF Current (IOFF): -10µA max at VOUT = VDD – 45V (25°C)
  • Quiescent Supply Current (IDD): 0.005µA (Typ. at VDD = 5V, 25°C)
  • Input Capacitance (CIN): 5pF (Typ.), 7.5pF (Max)
4. Truth Table (TC5064BP)
Input (AIN) Input (BIN) Input (IN) Output (TC5064BP)
L H L HZ
L H H H
* L * HZ
H * * HZ

* HZ = High Impedance | * = Don’t care

Applications
  • Fluorescent Display Tube Driving Circuits: Driving digit and segment signals for VFDs.
  • Logic Level Translation: Interfacing between CMOS/TTL/NMOS and PMOS circuits.
  • High-Voltage MOS LSI Interfacing: Buffer stage driving for circuits operating with high negative voltages (e.g., -EV).
Package Content
  • 1 x Toshiba TC5064BP Hex High-Voltage Buffer with Inhibit 3V to 18V 300mW DIP-16
DataSheet
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