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Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P

Silan 23N50: 500V, 23A N-Channel Power MOSFET in TO-3P. Low RDS(on) 0.21Ω, fast switching for AC-DC/DC-DC converters & PWM motor drivers.

85.00 EGP

In stockSKU 3496300159468
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Availability: In Stock
SKU:3496300159468
Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P

The 23N50 is a 23A, 500V N-channel enhancement-mode power MOS field effect transistor produced by Silan Microelectronics using Silan’s proprietary F-Cell™ structure VDMOS technology.

The improved planar stripe cell and improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

Features
  • 23A, 500V, RDS(on) (typ.) = 0.21Ω @ VGS = 10V
  • Low gate charge (Qg = 42.51nC typ.)
  • Low Crss (10.1pF typ.)
  • Fast switching (td(on) = 42.2ns, tf = 71.2ns typ.)
  • Improved dv/dt capability
  • High single-pulse avalanche energy: EAS = 2044mJ
  • Operating junction temperature range: −55°C to +150°C
Specifications
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Drain-Source Voltage VDS – – – 500 V
Gate-Source Voltage VGS – – – ±30 V
Drain Current (TC = 25°C) ID – – – 23.0 A
Drain Current (TC = 100°C) ID – – – 14.55 A
Drain Current – Pulsed IDM – – – 92.0 A
Power Dissipation (TC = 25°C) PD – – – 280 W
Power Dissipation – Derate above 25°C PD – – – 2.24 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS – – – 2044 mJ
Operating Junction Temperature Range TJ – -55 – +150 °C
Storage Temperature Range Tstg – -55 – +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case RθJC – – 0.45 – °C/W
Thermal Resistance, Junction-to-Ambient RθJA – – 50 – °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 500 – – V
Drain-Source Leakage Current IDSS VDS = 500V, VGS = 0V – – 1.0 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V – – ±100 nA
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 – 4.0 V
Static Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 11.5A – 0.21 0.27 Ω
Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz – 2595.8 – pF
Output Capacitance Coss VDS = 25V, VGS = 0V, f = 1.0MHz – 343.8 – pF
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz – 10.1 – pF
Turn-on Delay Time td(on) VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) – 42.2 – ns
Turn-on Rise Time tr VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) – 79.0 – ns
Turn-off Delay Time td(off) VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) – 125.7 – ns
Turn-off Fall Time tf VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) – 71.2 – ns
Total Gate Charge Qg VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) – 42.51 – nC
Gate-Source Charge Qgs VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) – 12.9 – nC
Gate-Drain Charge Qgd VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) – 14.34 – nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current (Body Diode) IS Integral reverse P-N junction diode – – 23.0 A
Pulsed Source Current ISM – – – 92.0 A
Diode Forward Voltage VSD IS = 23.0A, VGS = 0V – – 1.4 V
Reverse Recovery Time Trr IS = 23.0A, VGS = 0V, dIF/dt = 100A/µs (Note 2) – 578.21 – ns
Reverse Recovery Charge Qrr IS = 23.0A, VGS = 0V, dIF/dt = 100A/µs (Note 2) – 7.89 – µC

Applications
  • AC-DC power supplies
  • DC-DC converters
  • H-bridge PWM motor drivers
Package Content
  • 1 x Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P
DataSheet
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