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Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P
Silan 23N50: 500V, 23A N-Channel Power MOSFET in TO-3P. Low RDS(on) 0.21Ω, fast switching for AC-DC/DC-DC converters & PWM motor drivers.
85.00 EGP
Buy NowSilan 23N50 N-Channel Power MOSFET 500V 23A TO-3P
The 23N50 is a 23A, 500V N-channel enhancement-mode power MOS field effect transistor produced by Silan Microelectronics using Silan’s proprietary F-Cell™ structure VDMOS technology.
The improved planar stripe cell and improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Features
- 23A, 500V, RDS(on) (typ.) = 0.21Ω @ VGS = 10V
- Low gate charge (Qg = 42.51nC typ.)
- Low Crss (10.1pF typ.)
- Fast switching (td(on) = 42.2ns, tf = 71.2ns typ.)
- Improved dv/dt capability
- High single-pulse avalanche energy: EAS = 2044mJ
- Operating junction temperature range: −55°C to +150°C
Specifications
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | – | – | – | 500 | V |
| Gate-Source Voltage | VGS | – | – | – | ±30 | V |
| Drain Current (TC = 25°C) | ID | – | – | – | 23.0 | A |
| Drain Current (TC = 100°C) | ID | – | – | – | 14.55 | A |
| Drain Current – Pulsed | IDM | – | – | – | 92.0 | A |
| Power Dissipation (TC = 25°C) | PD | – | – | – | 280 | W |
| Power Dissipation – Derate above 25°C | PD | – | – | – | 2.24 | W/°C |
| Single Pulsed Avalanche Energy (Note 1) | EAS | – | – | – | 2044 | mJ |
| Operating Junction Temperature Range | TJ | – | -55 | – | +150 | °C |
| Storage Temperature Range | Tstg | – | -55 | – | +150 | °C |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | – | – | 0.45 | – | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | – | – | 50 | – | °C/W |
| ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250µA | 500 | – | – | V |
| Drain-Source Leakage Current | IDSS | VDS = 500V, VGS = 0V | – | – | 1.0 | µA |
| Gate-Source Leakage Current | IGSS | VGS = ±30V, VDS = 0V | – | – | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 2.0 | – | 4.0 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 11.5A | – | 0.21 | 0.27 | Ω |
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | – | 2595.8 | – | pF |
| Output Capacitance | Coss | VDS = 25V, VGS = 0V, f = 1.0MHz | – | 343.8 | – | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25V, VGS = 0V, f = 1.0MHz | – | 10.1 | – | pF |
| Turn-on Delay Time | td(on) | VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) | – | 42.2 | – | ns |
| Turn-on Rise Time | tr | VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) | – | 79.0 | – | ns |
| Turn-off Delay Time | td(off) | VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) | – | 125.7 | – | ns |
| Turn-off Fall Time | tf | VDD = 250V, RG = 10Ω, ID = 23.0A (Notes 2, 3) | – | 71.2 | – | ns |
| Total Gate Charge | Qg | VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) | – | 42.51 | – | nC |
| Gate-Source Charge | Qgs | VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) | – | 12.9 | – | nC |
| Gate-Drain Charge | Qgd | VDD = 400V, VGS = 10V, ID = 23.0A (Notes 2, 3) | – | 14.34 | – | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current (Body Diode) | IS | Integral reverse P-N junction diode | – | – | 23.0 | A |
| Pulsed Source Current | ISM | – | – | – | 92.0 | A |
| Diode Forward Voltage | VSD | IS = 23.0A, VGS = 0V | – | – | 1.4 | V |
| Reverse Recovery Time | Trr | IS = 23.0A, VGS = 0V, dIF/dt = 100A/µs (Note 2) | – | 578.21 | – | ns |
| Reverse Recovery Charge | Qrr | IS = 23.0A, VGS = 0V, dIF/dt = 100A/µs (Note 2) | – | 7.89 | – | µC |
Applications
- AC-DC power supplies
- DC-DC converters
- H-bridge PWM motor drivers
Package Content
- 1 x Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P