Specifications:
| Product Attribute | Attribute Value |
| Product Category: | Bipolar Transistors – BJT |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Transistor Polarity: | PNP |
| Configuration: | Single |
| Maximum DC Collector Current: | 4 A |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector- Base Voltage VCBO: | 45 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector-Emitter Saturation Voltage: | 1.4 V |
| Pd – Power Dissipation: | 40 W |
| Gain Bandwidth Product fT: | 2.5 MHz |
| Minimum Operating Temperature: | – 65 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | 2N61 |
| Continuous Collector Current: | 4 A |
| DC Collector/Base Gain hFE Min: | 25 |
| DC Current Gain hFE Max: | 100 |
Reviews
There are no reviews yet.