2SC3150 NPN Power Transistor 800V 3A TO-220
High-speed NPN power transistor (800V, 3A, 50W) in a TO-220 package. Perfect for switching regulators, inverters, and converters.
20.00 EGP
Buy Now2SC3150 NPN Power Transistor 800V 3A TO-220
The 2SC3150 is a high-voltage, high-speed NPN silicon power switching transistor housed in a standard TO-220 package. It is specifically engineered for robust performance in demanding high-voltage power applications, making it an excellent choice for switching regulators, inverters, and converters.
Features
- High Voltage Capacity
- Low Saturation Voltage
- Fast Switching Speeds
Specifications
Maximum Ratings (TC = 25°C unless otherwise noted)
| Specification / Characteristic | Symbol | Value / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 800 | V |
| Collector-Base Voltage | VCBO | 900 | V |
| Emitter-Base Voltage | VEBO | 7.0 | V |
| Collector Current – Continuous | IC | 3.0 | A |
| Collector Current – Peak | ICM | 10 | A |
| Base Current | IB | 1.5 | A |
| Total Power Dissipation @ TC = 25°C | PD | 50 | W |
| Derate Above 25°C | – | 0.4 | W/°C |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance Junction to Case | RθJC | 2.5 | °C/W |
Electrical Characteristics (TC = 25°C unless otherwise noted)
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage (IC = 3.0 A, IB = 1.0 A, L = 500 μH) | VCEO(SUS) | 800 | – | V |
| Collector-Emitter Breakdown Voltage (IC = 5.0 mA, IB = 0) | V(BR)CEO | 800 | – | V |
| Collector-Base Breakdown Voltage (IC = 1.0 mA, IE = 0) | V(BR)CBO | 900 | – | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) | V(BR)EBO | 7.0 | – | V |
| Collector Cutoff Current (VCB = 800 V, IE = 0) | ICBO | – | 10 | μA |
| Emitter Cutoff Current (VEB = 5.0 V, IC = 0) | IEBO | – | 10 | μA |
| DC Current Gain (IC = 1.0 A, VCE = 5.0 V) | hFE | 10 | 40 | – |
| Collector-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) | VCE(sat) | – | 2.0 | V |
| Base-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) | VBE(sat) | – | 1.5 | V |
| Current-Gain-Bandwidth Product (IC = 0.2 A, VCE = 10 V, f = 1.0 MHz) | fT | 7.0 | – | MHz |
Switching Characteristics (VCC = 400 V, IC = 2.0 A, IB1 = 0.4 A, IB2 = -0.8 A, RL = 200 Ω)
| Parameter | Symbol | Max | Unit |
|---|---|---|---|
| On Time | ton | 1.0 | μs |
| Storage Time | ts | 3.0 | μs |
| Fall Time | tf | 0.7 | μs |
Applications
- Switching Regulators
- Inverters
- Converters
Package Content
- 1 x 2SC3150 NPN Power Transistor 800V 3A TO-220
DataSheet
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