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2SK1461 N-Channel MOSFET Transistor 900V 5A TO-3P

2SK1461 N-channel power MOSFET, 900V 5A 120W, ultrahigh-speed switching, TO-3PB. No gate protection diode.

40.00 EGP

In stockSKU 3496300151073
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2SK1461 N-Channel MOSFET Transistor 900V 5A TO-3P

The 2SK1461 is a high-voltage N-Channel silicon MOSFET transistor designed for ultra high-speed switching applications, switching power supplies, industrial inverter systems, and power conversion circuits. The transistor is manufactured in a TO-3P package that provides excellent thermal dissipation and reliable high-power operation for through-hole electronic designs and industrial power electronics applications.

Features:
  • Low drain-source on-state resistance for minimal conduction losses.
  • Ultrahigh-speed switching capability.
  • Suitable for converter applications.
  • High voltage capability with 900V drain-source breakdown voltage.
  • Wide operating temperature range from -55°C to +150°C.
  • High power dissipation capability of 120W with proper heatsinking.
  • Fast switching times for high-frequency applications.
Specifications:
Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDSS) 900V
Gate-Source Voltage (VGSS) ±30V
Continuous Drain Current (ID) 5A
Pulsed Drain Current (IDP) 10A
Allowable Power Dissipation (PD) 2.5W (Ta=25°C, no heat sink) / 120W (Tc=25°C)
Drain-Source On-State Resistance (RDS(on)) 2.8Ω (Typ.) / 3.6Ω (Max.)
Drain-Source Breakdown Voltage (V(BR)DSS) 900V (Min.)
Zero Gate Voltage Drain Current (IDSS) 1.0mA (Max.)
Gate-Source Leakage Current (IGSS) ±100nA (Max.)
Gate-Source Cutoff Voltage (VGS(off)) 2.0V (Min.) / 3.0V (Max.)
Forward Transfer Admittance (|Yfs|) 1.0S (Min.) / 2.0S (Typ.)
Input Capacitance (Ciss) 700pF (Typ.)
Output Capacitance (Coss) 300pF (Typ.)
Reverse Transfer Capacitance (Crss) 170pF (Typ.)
Turn-On Delay Time (td(on)) 15ns (Typ.)
Rise Time (tr) 35ns (Typ.)
Turn-Off Delay Time (td(off)) 200ns (Typ.)
Fall Time (tf) 65ns (Typ.)
Diode Forward Voltage (VSD) 1.8V (Max.)
Storage Temperature Range -55°C to +150°C
Channel Temperature (Tch) 150°C (Max.)
Package Type TO-3PB
Mounting Style Through-Hole
Applications:
  • Ultrahigh-speed switching circuits.
  • Switch mode power supplies and SMPS designs.
  • DC-DC converter circuits.
  • High-voltage power switching applications.
  • Power inverter designs.
  • High-frequency power management systems.
Package Include:

1x 2SK1461 N-Channel MOSFET Power Transistor.

 Datasheet

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