Specifications:
- Type Designator: 2SK2275
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 35 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Continuous Drain Current |Id|: 3.5A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 20nS
- Drain-Source Capacitance (Cd): 170 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: TO220F
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