IRF640 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 150 W.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 18A |
| Drain-Source Resistance (Rds On) | 0.15Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 67 nC |
| Operating Temperature Range | -55 ∼ +175°C |
| Power Dissipation (Pd) | 150W |
