2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220
2SK3294 is an N-channel 250V 20A power MOSFET in a TO-220 package, featuring low on-resistance and built-in ESD protection for DC/DC converters.
30.00 EGP
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The 2SK3294 is an N-channel MOS FIELD EFFECT TRANSISTOR designed specifically for high-voltage switching applications. It features exceptionally low on-state resistance alongside excellent switching characteristics. The device includes an internal gate protection diode structure that serves as a protector against electrostatic discharge.
Features
- Low On-State Resistance
- Low Input Capacitance
- High Gate Voltage Rating
- Avalanche Capability Rated
- Built-in Gate Protection Diode
Specifications
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
| Rating Parameters | Symbol | Value | Unit |
|---|---|---|---|
| Drain to Source Voltage (VGS = 0 V) | VDSS | 250 | V |
| Gate to Source Voltage (VDS = 0 V) | VGSS | ±30 | V |
| Drain Current (DC) (TC = 25°C) | ID(DC) | ±20 | A |
| Drain Current (Pulse)Note 1 | ID(pulse) | ±60 | A |
| Total Power Dissipation (TC = 25°C) | PT1 | 100 | W |
| Total Power Dissipation (TA = 25°C) | PT2 | 1.5 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | -55 to +150 | °C |
| Single Avalanche CurrentNote 2 | IAS | 20 | A |
| Single Avalanche EnergyNote 2 | EAS | 150 | mJ |
Electrical Characteristics (TA = 25°C)
| Characteristics | Symbol | Test Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Zero Gate Voltage Drain Current | IDSS | VDS = 250 V, VGS = 0 V | 100 | μA | ||
| Gate Leakage Current | IGSS | VGS = ±30 V, VDS = 0 V | ±10 | μA | ||
| Gate Cut-off Voltage | VGS(off) | VDS = 10 V, ID = 1 mA | 2.5 | 4.5 | V | |
| Forward Transfer Admittance | |yfs| | VDS = 10 V, ID = 10 A | 6.0 | S | ||
| Drain to Source On-state Resistance | RDS(on) | VGS = 10 V, ID = 10 A | 120 | 160 | mΩ | |
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz | 1500 | pF | ||
| Output Capacitance | Coss | 360 | pF | |||
| Reverse Transfer Capacitance | Crss | 220 | pF | |||
| Turn-on Delay Time | td(on) | VDD = 125 V, ID = 10 A, VGS = 10 V, RG = 10 Ω | 24 | ns | ||
| Rise Time | tr | 78 | ns | |||
| Turn-off Delay Time | td(off) | 110 | ns | |||
| Fall Time | tf | 60 | ns | |||
| Total Gate Charge | QG | VDD = 200 V, VGS = 10 V, ID = 20 A | 57 | nC | ||
| Gate to Source Charge | QGS | 8 | nC | |||
| Gate to Drain Charge | QGD | 36 | nC | |||
| Body Diode Forward Voltage | VF(S-D) | IF = 20 A, VGS = 0 V | 1.0 | V | ||
| Reverse Recovery Time | trr | IF = 20 A, VGS = 0 V, di/dt = 50 A/μs | 340 | ns | ||
| Reverse Recovery Charge | Qrr | 2.1 | μC |
Applications
- DC/DC Converter systems
- Actuator Drivers
- General switching circuits in consumer and industrial equipment
Package Content
- 1 x 2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220
DataSheet
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