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4069 CMOS Hex Inverter/NOT Gate 3V to 18V 1µA PDIP-14

CD4069BE CMOS hex inverter IC with six inverters, 3V to 18V supply, 14-pin PDIP. For logic inversion, pulse shaping, oscillators and high-impedance amps.

13.00 EGP

In stockSKU 300000006986
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Availability: In Stock
SKU:300000006986
CD4069BE CMOS Hex Inverter/NOT Gate 3V to 18V 1µA PDIP-14
The CD4069UB device consists of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the CD4009 and CD4049 hex inverter and buffers are not required.
The CD4069UBE is supplied in a 14-pin PDIP package and operates from a recommended supply voltage range of 3 V to 18 V. It has standardized symmetrical output characteristics and medium-speed operation, with tPHL and tPLH of 30 ns typical at 10 V.
The device is designed for applications including logic inversion, pulse shaping, oscillators, and high-input-impedance amplifiers. Its lower drive capability also makes it suitable for driving light loads such as LEDs and helps reduce the chance of overshoots and undershoots.
Features
  • Six CMOS inverter circuits in one package
  • Standardized symmetrical output characteristics
  • Wide recommended supply voltage range: 3 V to 18 V
  • 100% tested for quiescent current at 20 V
  • Maximum input current of 1 µA at 18 V over the full package-temperature range
  • Recommended operating ambient temperature: -55°C to +125°C
Specifications
Function CMOS hex inverter
Number of inverter circuits 6
Package PDIP-14, N package
Body size 19.30 mm × 6.35 mm
Pin count 14
Recommended supply voltage, VDD 3 V to 18 V
Absolute maximum supply voltage, VDD -0.5 V to 20 V, stress rating only
Input voltage, all inputs, absolute maximum -0.5 V to VDD + 0.5 V
Recommended operating ambient temperature -55°C to +125°C
Storage temperature -65°C to +150°C
Input current 1 µA maximum at 18 V over full package-temperature range; 100 nA at 18 V and 25°C; static table limit ±1 µA maximum at VDD = 18 V
Quiescent device current at 25°C 0.01 µA typical; 0.25 µA maximum at VDD = 5 V; 0.5 µA maximum at VDD = 10 V; 1 µA maximum at VDD = 15 V; 5 µA maximum at VDD = 20 V test condition
Propagation delay time, tPLH/tPHL 30 ns typical at VDD = 10 V; 60 ns maximum at VDD = 10 V; 55 ns typical / 110 ns maximum at VDD = 5 V; 25 ns typical / 50 ns maximum at VDD = 15 V
Transition time, tTHL/tTLH 50 ns typical / 100 ns maximum at VDD = 10 V; 100 ns typical / 200 ns maximum at VDD = 5 V; 40 ns typical / 80 ns maximum at VDD = 15 V
Input capacitance 10 pF typical, 15 pF maximum
Low-level output voltage, VOL 0.05 V maximum at VDD = 5 V, 10 V, or 15 V
High-level output voltage, VOH 4.95 V minimum at VDD = 5 V; 9.95 V minimum at VDD = 10 V; 14.95 V minimum at VDD = 15 V
Input low voltage, VIL 1 V maximum at VDD = 5 V; 2 V maximum at VDD = 10 V; 2.5 V maximum at VDD = 15 V
Input high voltage, VIH 4 V minimum at VDD = 5 V; 8 V minimum at VDD = 10 V; 12.5 V minimum at VDD = 15 V
Output low sink current, IOL VDD = 5 V: 0.51 mA minimum / 1 mA typical; VDD = 10 V: 1.3 mA minimum / 2.6 mA typical; VDD = 15 V: 3.4 mA minimum / 6.8 mA typical
Output high source current, IOH VDD = 5 V: -0.51 mA minimum / -1 mA typical; VDD = 10 V: -1.3 mA minimum / -2.6 mA typical; VDD = 15 V: -3.4 mA minimum / -6.8 mA typical
Absolute maximum DC input current, any one input -10 mA to +10 mA
Power dissipation 500 mW per package from -55°C to 100°C; 100 mW per output transistor
Junction temperature 150°C maximum
Lead temperature 265°C maximum

Applications
  • Logic inversion
  • Pulse shaping
  • Oscillators
  • High-input-impedance amplifiers
Package Content
  • 1 x CD4069BE CMOS Hex Inverter/NOT Gate 3V to 18V 1µA PDIP-14
DataSheet
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