60T65PES IGBT Transistor TO-247 MBQ60T65PES

Power Beyond Limits: MBQ60T65PES IGBT Transistor

Features:

• High-Speed Switching & Low Power Loss: Ensures efficient operation with minimal energy loss.
• Collector-Emitter Saturation Voltage (VCE(sat)): 1.85V at a collector current (IC) of 60A.
• Turn-Off Energy Loss (Eoff): 0.53mJ at a case temperature (TC) of 25°C.
• High Input Impedance: Facilitates easy drive requirements.
• Reverse Recovery Time (trr): 110ns (typical) at a di/dt of 500A/μs.
• Maximum Junction Temperature: 175°C.

Specifications:

• Collector-Emitter Breakdown Voltage (BVCES): 650V.
• Gate-Emitter Threshold Voltage (VGEth): 6V.
• Maximum Collector Current (IC): 100A at 25°C.
• Maximum Gate-Emitter Voltage (VGE): 20V.
• Thermal Resistance Junction-to-Ambient (RθJA): 40°C/W.
• Thermal Resistance Junction-to-Case for IGBT (RθJC): 0.28°C/W.
• Thermal Resistance Junction-to-Case for Diode (RθJC): 1.1°C/W.

Applications:

• Power Factor Correction (PFC) circuits.
• Uninterruptible Power Supplies (UPS).
• Photovoltaic (PV) inverters.
• Welding equipment.
• Induction Heating (IH) cookers.

Document:

Data sheet