| Manufacturer | Nexperia |
| Mfr. Part # | BC857BS,115 |
| Package | SOT-363 |
| Datasheet | Nexperia-BC857BS-115 |
| Description | 45V 200mW 200@2mA,5V 100mA PNP SOT-363-6 Bipolar (BJT) ROHS |
Specifications
| Attribute | Value |
| Category | Transistors/Bipolar Transistors – BJT |
| Datasheet | Nexperia-BC857BS-115 |
| RoHS | |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 200mW |
| Collector Current (Ic) | 100mA |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@100mA,5mA |
| Transistor Type | PNP |
| Operating Temperature | +150℃@(Tj) |
