Specifications
| Product Attribute | Attribute Value |
| Product Category: | Bipolar Transistors – BJT |
| Mounting Style: | SMD/SMT |
| Package/Case: | TSSOP-6 |
| Transistor Polarity: | NPN |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector- Base Voltage VCBO: | 50 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum DC Collector Current: | 100 mA |
| Pd – Power Dissipation: | 300 mW |
| Gain Bandwidth Product fT: | 250 MHz |
| Minimum Operating Temperature: | – 65 C |
| Maximum Operating Temperature: | + 150 C |
| DC Collector/Base Gain hFE Min: | 200 at 2 mA, 5 V |
| DC Current Gain hFE Max: | 200 at 2 mA, 5 V |
| Product Type: | BJTs – Bipolar Transistors |
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