BD244C TO-220 Bipolar Transistors – BJT

Specifications:

• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage ‘Vcb’: 100 V
• Maximum Collector-Emitter Voltage ‘Vce’: 100V
• Maximum Emitter-Base Voltage ‘Veb’: 5 V
• Maximum Collector Current ‘Ic max’: 6 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 30
• Package: TO-220

BD244C Datasheet