BD250C 45V 125W 5@25A,4V 25A PNP TO-3PN Bipolar Transistors – BJT

Specifications:

• Type Designator: BD250C
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 125 W
• Maximum Collector-Emitter Voltage |Vcer| ((RBE= 100Ω): 115 V
• Maximum Collector-Emitter Voltage |Vceo|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Collector-Emitter Breakdown Voltage (Vceo): 45V
• Collector Current-Continuous |Ic max|: 25A
• Maximum Collector Current |Ic max|: 40 A
• Max. Operating Junction Temperature (Tj): 150 °C

BD250C Datasheet