Specifications:
- Type Designator: BU2527AF
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 45 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 800 V
- Maximum Collector Current |Ic max|: 12 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Collector Capacitance (Cc): 145 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: SOT199
