BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3 Made in Malaysia
The BUX98C is a robust Silicon Multi-Epitaxial Mesa NPN transistor housed in a hermetically sealed JEDEC TO-3 metal case. Engineered for high-power applications, this transistor excels in demanding industrial environments. Its design is optimized for use in switching and linear applications, particularly those operating from single and three-phase mains.
Features
- High Voltage Capability
- High Current Capability
- Fast Switching Speed
- High Power Dissipation
- Robust TO-3 Package
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Polarity | NPN | – |
| Collector-Emitter Voltage (VCEO) | 700 | V |
| Collector-Emitter Voltage (VCES) | 1200 | V |
| Collector-Base Voltage (VCBO) | 1200 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Continuous Collector Current (IC) | 30 | A |
| Peak Collector Current (ICM) | 60 | A |
| Total Power Dissipation (Ptot) @ Tc=25°C | 250 | W |
| Max. Operating Junction Temperature (Tj) | 200 | °C |
| Package Type | TO-3 | – |
Applications
- High-Frequency and High-Efficiency Converters
- Linear and Switching Industrial Equipment
- Power Amplifiers
- Motor Control Circuits
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