G40T120FDL5 IGPT Transistor 1200V 40A TO-247
G40T120FDL5 IGBT Transistor TO-247 is a high-performance 1200V power switching device designed for efficient industrial and high-frequency applications.
85.00 EGP
In stockSKU 3496300147182
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G40T120FDL5 IGPT Transistor 1200V 40A TO-247
The G40-T120FDL5 IGBT Transistor in TO-247 package is a high-efficiency power semiconductor device engineered for demanding switching applications. This Insulated Gate Bipolar Transistor (IGBT) combines the high input impedance and fast switching characteristics of a MOSFET with the low conduction losses of a bipolar transistor, making it ideal for modern power electronics systems.
Feature:
- High collector-emitter voltage rating up to 1200V.
- Low saturation voltage for reduced conduction losses.
- Fast switching performance with low switching losses.
- Advanced trench and field-stop IGBT technology.
- High current handling capability up to 40A.
Specifications:
| Parameter | Value |
|---|---|
| Model | G40T120FDL5 |
| Package | TO-247 |
| Collector-Emitter Voltage | 1200V |
| Gate-Emitter Voltage | ±20V |
| Collector Current (T_C=100°C) | 40A |
| Collector Current (T_C=25°C) | 80A |
| Pulsed Collector Current | 160A |
| Power Dissipation (T_C=25°C) | 428W |
| V_CE(sat) (typ @ 40A) | 1.65V |
| Operating Junction Temperature | -40°C to +175°C |
Dimension:
Foot Print:
Applications:
- Uninterruptible power supplies (UPS).
- Welding converters and machines.
- High-frequency DC-DC and AC-DC converters.
- Industrial motor drives and inverters.
- Solar and renewable energy inverters.
- Induction heating equipment.
- Power factor correction circuits.
- Professional power electronics and automation systems.
Package Include:
1x G40-T120FDL5 IGPT Transistor TO-247
Datasheet:
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