G50N60RUFD IGBT Transistors 600V 50A TO-264
The G50N60RUFD is a high-voltage IGBT commonly used for motor control, UPS systems, and general-purpose inverter circuits requiring high-current switching and short-circuit ruggedness.
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G50N60RUFD IGBT Transistors 600V 50A TO-264
The G50N60RUFD, corresponding to the SGL50N60RUFD device in the supplied datasheet, is a 600 V, 50 A short-circuit-rated Insulated Gate Bipolar Transistor designed for high-power switching applications. It combines low conduction and switching losses with short-circuit ruggedness, making it suitable for power electronic circuits where reliable switching of high voltages and currents is required. The device has a high input impedance and supports high-speed switching operation.
This IGBT is designed for applications such as motor control, uninterruptible power supplies, and general inverters. It provides a 600 V collector-emitter voltage rating, a 50 A collector current rating at a 100°C case temperature, and a 150 A pulsed collector current rating. The device also includes an integrated diode and has a short-circuit withstand time of 10 µs at 100°C case temperature.
Features:
- High-voltage IGBT design.
- Short-circuit ruggedness.
- High-speed switching.
- Low conduction and switching losses.
- High input impedance.
- Integrated freewheeling diode.
- Suitable for high-power switching circuits.
- Designed for motor control, UPS, and inverter applications.
Specifications:
| Parameter | Value |
|---|---|
| Part Number | G50N60RUFD |
| Device Type | IGBT |
| Package | TO-264, 3 Lead |
| Collector-Emitter Voltage (VCES) | 600 V |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Collector Current @ TC = 25°C | 80 A |
| Collector Current @ TC = 100°C | 50 A |
| Pulsed Collector Current (ICM) | 150 A |
| Collector-Emitter Saturation Voltage | 2.2 V @ 50 A, 15 V gate drive |
| Gate-Emitter Threshold Voltage | 5.0–8.5 V |
| Short-Circuit Withstand Time | 10 µs @ 100°C |
| Maximum Power Dissipation @ TC = 25°C | 250 W |
| Maximum Power Dissipation @ TC = 100°C | 100 W |
| Operating Junction Temperature | -55 to +150°C |
| Storage Temperature | -55 to +150°C |
| IGBT Junction-to-Case Thermal Resistance | 0.5°C/W |
| Diode Junction-to-Case Thermal Resistance | 1.0°C/W |
| Input Capacitance | 3311 pF |
| Output Capacitance | 399 pF |
| Reverse Transfer Capacitance | 139 pF |
| Total Gate Charge | 145 nC |
| Gate-Emitter Charge | 25 nC |
| Gate-Collector Charge | 70 nC |
| Turn-On Delay Time | 26 ns @ 25°C |
| Rise Time | 89 ns @ 25°C |
| Turn-Off Delay Time | 66 ns @ 25°C |
| Fall Time | 118 ns @ 25°C |
| Diode Forward Voltage | 1.9 V @ 30 A, 25°C |
| Manufacturer | Fairchild Semiconductor |
Pinout:
| Pin | Name | Function |
|---|---|---|
| 1 | Gate (G) | Controls IGBT switching |
| 2 | Collector (C) | High-current collector terminal |
| 3 | Emitter (E) | Emitter/current return terminal |
Applications:
- Motor control.
- Uninterruptible Power Supplies (UPS).
- General-purpose inverters.
- High-power switching circuits.
- Power conversion circuits.
- Industrial inverter systems.
Packages Included:
- 1x G50N60RUFD IGBT Transistors 600V 50A TO-264.
Documents:
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