- You cannot add "L293D Quadruple Half-H Driver IC DIP-16" to the cart because the product is out of stock.
IR2117 High-Voltage High-Speed Single-Channel Gate Driver IC 600V DIP-8
IR2117 600V high-voltage, high-speed single-channel MOSFET/IGBT gate driver, 10-20V, 200mA source/420mA sink, in-phase output, 8-pin PDIP.
70.00 EGP
In stockSKU 3496300096886
Buy Now
Shipping across EgyptDelivered to your door
Cash on deliveryPay when your order arrives
Not sure it fits your project?Ask us on WhatsApp - we reply fast
IR2117 High-Voltage High-Speed Single-Channel Gate Driver IC 600V DIP-8
The IR2117 is a high-voltage, high-speed power MOSFET and IGBT driver. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs.
Features
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- Gate drive supply range from 10V to 20V
- CMOS Schmitt-triggered inputs with pull-down
- Output in phase with input
- High pulse current buffer stage designed for minimum cross-conduction
- Logic input compatible with standard CMOS outputs
- Single-channel driver
Specifications
| Parameter | Value | Conditions / Notes |
|---|---|---|
| General | ||
| Product Type | High-voltage, high-speed power MOSFET and IGBT driver | Single channel |
| Part Number | IR2117 | 8-lead PDIP package |
| Lead-Free Part Number | IR2117PbF | Lead-free version |
| Output Phase | Output in phase with input | IR2117 specific |
| Input Type | CMOS Schmitt-triggered input with pull-down | Logic input compatible with standard CMOS outputs |
| Output Driver | High pulse current buffer stage | Designed for minimum cross-conduction |
| Floating Channel | Designed for bootstrap operation | Can be used to drive an N-channel power MOSFET or IGBT in high or low side configuration |
| Key Ratings | ||
| VOFFSET | 600V max | High-side floating supply offset voltage |
| Gate Drive Supply Range | 10V to 20V | From datasheet features and product summary |
| Output High Short-Circuit Pulsed Current (IO+) | 200mA min, 250mA typ | VO = 0V, VIN = Logic “1”, PW ≤ 10µs |
| Output Low Short-Circuit Pulsed Current (IO-) | 420mA min, 500mA typ | VO = 15V, VIN = Logic “0”, PW ≤ 10µs |
| Turn-On Propagation Delay, ton | 125ns typ, 200ns max | VS = 0V |
| Turn-Off Propagation Delay, toff | 105ns typ, 180ns max | VS = 600V |
| Turn-On Rise Time, tr | 80ns typ, 130ns max | Dynamic switching characteristic |
| Turn-Off Fall Time, tf | 40ns typ, 65ns max | Dynamic switching characteristic |
| Dynamic Test Conditions | VBIAS (VCC, VBS) = 15V; CL = 1000pF; TA = 25°C | Unless otherwise specified |
| Recommended Operating Conditions | ||
| VB, High-Side Floating Supply Voltage | VS + 10V to VS + 20V | Recommended operating condition |
| VS, High-Side Floating Supply Offset Voltage | 600V max | Logic operational for VS of -5V to +600V; logic state held for VS of -5V to -VBS |
| VHO, High-Side Floating Output Voltage | VS to VB | Recommended operating condition |
| VCC, Logic Supply Voltage | 10V to 20V | Recommended operating condition |
| VIN, Logic Input Voltage | 0V to VCC | Recommended operating condition |
| Ambient Temperature, TA | -40°C to +125°C | Recommended operating condition |
| Allowable Offset Supply Voltage Transient, dVs/dt | 50 V/ns | Maximum rating |
| Static Electrical Characteristics | ||
| Input Logic “1” Voltage, VIH | 9.5V min | IR2117 logic “1” |
| Input Logic “0” Voltage, VIL | 6.0V max | IR2117 logic “0” |
| High-Level Output Voltage Drop, VBIAS – VO | 100mV max | IO = 0A |
| Low-Level Output Voltage, VOL | 100mV max | IO = 0A |
| Offset Supply Leakage Current, ILK | 50µA max | VB = VS = 600V |
| Quiescent VBS Supply Current, IQBS | 50µA typ, 240µA max | VIN = 0V or VCC |
| Quiescent VCC Supply Current, IQCC | 70µA typ, 340µA max | VIN = 0V or VCC |
| Logic “1” Input Bias Current, IIN+ | 20µA typ, 40µA max | VIN = VCC |
| Logic “0” Input Bias Current, IIN- | 1.0µA max | VIN = 0V |
| VBS Undervoltage Positive-Going Threshold, VBSUV+ | 7.6V min, 8.6V typ, 9.6V max | VBS supply undervoltage threshold |
| VBS Undervoltage Negative-Going Threshold, VBSUV- | 7.2V min, 8.2V typ, 9.2V max | VBS supply undervoltage threshold |
| VCC Undervoltage Positive-Going Threshold, VCCUV+ | 7.6V min, 8.6V typ, 9.6V max | VCC supply undervoltage threshold |
| VCC Undervoltage Negative-Going Threshold, VCCUV- | 7.2V min, 8.2V typ, 9.2V max | VCC supply undervoltage threshold |
| Absolute Maximum Ratings | ||
| VB, High-Side Floating Supply Voltage | -0.3V to 625V | Absolute maximum rating |
| VS, High-Side Floating Supply Offset Voltage | VB – 25V to VB + 0.3V | Absolute maximum rating |
| VHO, High-Side Floating Output Voltage | VS – 0.3V to VB + 0.3V | Absolute maximum rating |
| VCC, Logic Supply Voltage | -0.3V to 25V | Absolute maximum rating |
| VIN, Logic Input Voltage | -0.3V to VCC + 0.3V | Absolute maximum rating |
| Junction Temperature, TJ | 150°C max | Absolute maximum rating |
| Storage Temperature, TS | -55°C to +150°C | Absolute maximum rating |
| Lead Temperature | 300°C max | Soldering, 10 seconds |
| Package and Thermal Data (8-Pin PDIP) | ||
| Package Type | 8-Lead PDIP | Through-hole package |
| Package Power Dissipation, PD | 1.0W | TA ≤ +25°C |
| Thermal Resistance, Junction-to-Ambient, RthJA | 125°C/W | Board-mounted, still-air conditions |
Applications
- High-voltage, high-speed power MOSFET gate driving
- High-voltage, high-speed IGBT gate driving
- N-channel power MOSFET or IGBT drive in high-side configuration
- N-channel power MOSFET or IGBT drive in low-side configuration
Package Content
- 1 x IR2117 High-Voltage High-Speed Single-Channel Gate Driver IC 600V DIP-8
DataSheet
Related products
