IRF1010 N-channel MOSFET, 75A, 55V, 0.014Ω for power switching

IRF1010 N-Channel Power MOSFET – High Current, Low Rds(on) for Efficient Power Switching

Features:

• High Current Rating: Can handle up to 75A, suitable for high-current applications.
• Low On-Resistance: Ultra-low Rds(on) of 0.014Ω ensures minimal power loss and high efficiency.
• High Voltage Capability: Rated for up to 55V drain-source voltage.
• Fast Switching: Quick switching characteristics for reduced switching losses.
• Thermal Stability: Built for efficient heat dissipation, enhancing reliability.
• TO-220 Package: Suitable for mounting on heat sinks, optimizing heat management.

Specifications:

• Type: N-Channel MOSFET
• Maximum Drain-Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 75A (at 25°C)
• Gate Threshold Voltage (Vgs(th)): 1-4V
• Rds(on) (Static Drain-Source On-Resistance): 0.014Ω
• Total Gate Charge (Qg): 160nC
• Power Dissipation: 150W (max)
• Package Type: TO-220
• Operating Temperature Range: -55°C to +150°C

Applications:

• Power Conversion: Ideal for high-efficiency power converters and DC-DC converters.
• Motor Drivers: Perfect for driving high-power motors in industrial and automotive applications.
• Switching Regulators: Used in high-frequency switching power supplies for improved efficiency.
• Inverters: Efficient inverters for renewable energy systems and power supplies.
• Audio Amplifiers: Great for power output stages in audio amplifiers with high current requirements.
• Automotive Systems: Suitable for use in automotive power management circuits.

IRF1010 Data sheet