IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Ease of paralleling
- Simple drive requirements
Manufacturer | Infineon Technologies |
Mfr. Part # | IRFP250N |
Package | TO-247AC |
Datasheet | Infineon Technologies IRFP250N |
Description | 200V 30A 75mΩ@10V,18A 214W 4V@250uA N Channel TO-247AC MOSFETs ROHS |
Specifications:
Attribute | Value |
Category | Triode/MOS Tube/Transistor/MOSFETs |
Datasheet | Infineon Technologies IRFP250N |
RoHS | |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 30A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 75mΩ@10V,18A |
Power Dissipation (Pd) | 214W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | N Channel |
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