IRF510 100V 5.6A 43W 540mΩ@3.4A,10V N Channel TO-220AB MOSFET Transistor

IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.

IRF510 MOSFET is capable to withstand drain-to-source voltage V_DS up to 100V and continuous drain current I_D up to 5.6A. It can withstand 20A current in pulse mode and belongs to the package TO-220AB. It is designed for applications that require high-speed switching like a motor driver, switching converter and regulators, etc.

IRF510 Pinout Description

Features

• Dynamic dv/dt rating
• Single-pulse avalanche rated
• High input impedance
• Linear transfer characteristic
• High-speed switching speed (in terms of nano-second)
• Ease of paralleling
• Operating temperature up to 175˚C
• Low thermal resistance

Technical Specifications

• Transistor Polarity: N-channel
• Drain-to-source voltage V_DS: 100V
• Drain-to-source current I_D: 5.6A
• On-state resistance (drain-to-source resistance) R_DS: 0.54Ω
• Operating temperature range: -55˚C to 175˚C
• Gate charge Q_g: 8.3nC
• Gate-source voltage V_GS: ±20V
• Maximum power dissipation: 43W
• Maximum voltage required to conduct: 2V to 4V
• Package type: TO-220AB

Note: More technical specifications can be found in the IRF510 datasheet attached at the end of this page.

Switching Characteristics

• Turn-on delay time t_d(on): 6.9ns
• Turn-off delay time t_d(off): 15ns
• Rise time t_r: 16ns
• Fall time t_f: 9.4ns

Applications

The applications of IRF510 are listed below.

• UPS (Uninterruptable Power Supply)
• Battery charger and management system
• Motor driver circuit
• Telecommunication and computer applications
• Solar UPS
• Fast switching applications
• Switching converter and regulators

Component Datasheet

IRF510 MOSFET Datasheet