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IRF730 N-Channel MOSFET Transistor (400V , 5.5A)

16.00 EGP

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Availability: In Stock
SKU:4150482017235

IRF730 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W.

Features:-

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

Detailed Specifications:-

Product Attribute Attribute Value
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 400 V
Id – Continuous Drain Current: 5.5 A
Rds On – Drain-Source Resistance: 1 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 38 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 74 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 14 ns
Product Type: MOSFET
Rise Time: 15 ns
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