IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220
The IRF9640 is a P-Channel MOSFET in a TO-220 package, offering 200V voltage, 11A current, and 0.5Ω Rds(on), ideal for power switching and control applications.
25.00 EGP
In stockSKU 34963001011610
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IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220
The IRF9640 is a P-channel power MOSFET engineered for commercial and industrial power applications. Housed in the TO-220AB package, it offers a 200 V drain-to-source rating and is optimized for fast switching and rugged operation. Its third-generation silicon process provides a balance of low on-resistance, switching performance and avalanche robustness suitable for medium-power designs.
Electrically the device supports up to −11 A continuous drain current (TC = 25 °C) with pulsed capability far higher for short durations, and has an RDS(on) of 0.50 Ω measured at VGS = −10 V (ID = −6.6 A). The IRF9640 includes a well-characterized body diode and is rated for repetitive avalanche and high dV/dt performance, making it tolerant to inductive switching stresses when used within SOA limits.
Mechanically the TO-220AB offers low thermal resistance for heatsinking (RθJC ≈ 1.0 °C/W) and the datasheet provides thermal, SOA and switching graphs to guide reliable implementation. Available as Pb-free and SnPb part numbers, the IRF9640 is commonly used where a high-voltage P-channel device is required for high-side switching, complementary stages, or general power management in industrial equipment.
Features:
- P-channel power MOSFET, VDS = −200 V.
- Continuous drain current −11 A (TC = 25 °C).
- RDS(on) = 0.50 Ω @ VGS = −10 V, ID = −6.6 A.
- Fast switching with low total gate charge Qg (Max 44 nC).
- Repetitive avalanche rated and dynamic dV/dt tolerant.
- Robust body-diode characteristics (IS = 11 A continuous, ISM pulsed 44 A).
- RoHS compliant; available in Pb-free and SnPb part numbers.
Specifications:
| Parameter | Value |
|---|---|
| Device Type: | P-Channel Power MOSFET |
| Drain-Source Voltage (VDS): | 200 V |
| Gate-Source Voltage (VGS): | ±20 V |
| Continuous Drain Current (ID): | 11 A |
| Pulsed Drain Current (IDM): | 44 A |
| Drain-Source On-Resistance (RDS(on)): | 0.50 Ω @ VGS = −10 V |
| Total Power Dissipation (PD): | 125 W |
| Total Gate Charge (Qg): | 44 nC |
| Input Capacitance (Ciss): | 1200 pF |
| Output Capacitance (Coss): | 370 pF |
| Reverse Transfer Capacitance (Crss): | 81 pF |
| Junction-to-Case Thermal Resistance (RθJC): | 1.0 °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA): | 62 °C/W |
| Operating Junction Temperature (TJ): | −55 °C to +150 °C |
| Package: | TO-220AB |
Pinout:
Applications:
- High-side switching and load switching.
- Complementary P-channel stages in power management.
- Industrial power supplies and commercial-industrial converters.
- General medium-power switching where P-channel is required.
Package Contents:
- 1x IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220
Datasheet
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