Features:
- The IRFB4410 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring high current handling capabilities and low Rds(on) (on-resistance).
- It is designed to operate in switching applications, providing high efficiency and fast switching characteristics.
- High Current Rating: Capable of handling high currents (up to 88A).
- High Breakdown Voltage: Rated at 100V, suitable for medium voltage applications.
- Its low gate charge, low on-resistance, and high current rating make it ideal for use in power regulation and motor control circuits.
- Low Gate Charge (Qg): Ensures fast switching speeds, reducing the switching losses.
- Thermal Stability: With a TO-220 package, it can dissipate power efficiently.
Pin Assignments:
Specifications:
| Datasheet | IRFB4410 |
| Model | IRFB4410 |
| Product Type | MOSFETs |
| Channel Mode | Enhancement |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Package/Case | TO – 220 |
| Vds-Drain-Source Breakdown Voltage | 100 V |
| Id-Continuous Drain Current | 88 A |
| Rds On-Drain-Source Resistance | 10 mΩ |
| Vgs-Gate-Source Voltage(Max.) | – 20 V , + 20 V |
| Operating Temperature | – 55 °C to + 175 °C |
| Pd-Power Dissipation | 250 W |
Applications:
- High Efficiency Synchronous Rectification in SMPS.
- Uninterruptible Power Supply.
- High Speed Power Switching.
- Hard Switched and High Frequency Circuits.
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