IRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4
FD010 N-Channel 50V 1.7A Power MOSFET. Low on-resistance and fast switching in a compact 4-pin DIP package.
75.00 EGP
Buy NowIRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4
The IRFD010 leverages advanced HEXFET technology to achieve very low on-state resistance combined with high transconductance and great device ruggedness. It inherits all the core advantages of standard MOSFETs, including simple voltage control, ultra-fast switching, ease of paralleling, and highly stable electrical parameters across temperature variations.
Features
- Optimized for Automatic Insertion
- Space-Saving Design
- High Efficiency
- Design Flexibility
- Robust Performance
Specifications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Units / Conditions |
|---|---|---|---|
| VDS | Drain Source Voltage | 50 | V |
| VDGR | Drain Gate Voltage (RGS = 20 kΩ) | 50 | V |
| ID @ 25°C | Continuous Drain Current | 1.7 | A, TC = 25°C |
| ID @ 100°C | Continuous Drain Current | 1.1 | A, TC = 100°C |
| IDM | Pulsed Drain Current | 11 | A |
| VGS | Gate Source Voltage | ±20 | V |
| PD @ 25°C | Max. Power Dissipation | 1 | W, TC = 25°C |
| – | Linear Derating Factor | 0.0082 | W/K (W/°C) |
| ILM | Inductive Current, Clamped | 14 | A, L = 100 μH |
| IL | Unclamped Inductive Current (Avalanche Current) | 1.5 | A |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| – | Lead Temperature (Soldering) | 300 | °C, 1.6mm from case for 10s |
Electrical Characteristics (@ TC = 25°C)
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| BVDSS | Drain Source Breakdown Voltage | 50 | – | – | V (VGS = 0V, ID = 250 μA) |
| VGS(th) | Gate Threshold Voltage | 2.0 | – | 4.0 | V (VDS = VGS, ID = 250 μA) |
| IGSS | Gate-Source Leakage Forward | – | – | 500 | nA (VGS = 20V) |
| IGSS | Gate-Source Leakage Reverse | – | – | -500 | nA (VGS = -20V) |
| IDSS | Zero Gate Voltage Drain Current | – | – | 250 | μA (VDS = Max Rating, VGS = 0V) |
| IDSS | High Temp. Zero Gate Voltage Drain Current | – | – | 1000 | μA (0.8 × Max VDS, VGS = 0V, TC = 125°C) |
| ID(on) | On-State Drain Current | 1.7 | – | – | A (VDS > ID(on) × RDS(on)max, VGS = 10V) |
| RDS(on) | Static Drain-Source On-State Resistance | – | 0.16 | 0.20 | Ω (VGS = 10V, ID = 0.88A) |
| gfs | Forward Transconductance | 2.1 | 3.2 | – | S (VDS = 2 × VGS, IDS = 3.6A) |
Dynamic, Switching & Thermal Characteristics
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Ciss | Input Capacitance | – | 250 | – | pF (VGS = 0V, VDS = 25V, f = 1.0 MHz) |
| Coss | Output Capacitance | – | 150 | – | pF |
| Crss | Reverse Transfer Capacitance | – | 29 | – | pF |
| td(on) | Turn-On Delay Time | – | 11 | 17 | ns (VDD = 25V, ID = 7.2A, RG = 25Ω, RD = 3.3Ω) |
| tr | Rise Time | – | 33 | 50 | ns |
| td(off) | Turn-Off Delay Time | – | 12 | 18 | ns |
| tf | Fall Time | – | 23 | 35 | ns |
| Qg | Total Gate Charge | – | 8.8 | 13 | nC (VGS = 10V, ID = 7.2A Max Rating) |
| Qgs | Gate-Source Charge | – | 2.2 | 3.3 | nC |
| Qgd | Gate-Drain (“Miller”) Charge | – | 2.6 | 3.9 | nC |
| LD | Internal Drain Inductance | – | 4.0 | – | nH (6mm from package to center of die) |
| LS | Internal Source Inductance | – | 6.0 | – | nH (6mm from package to source bonding pad) |
| RthJA | Thermal Resistance, Junction-to-Ambient | – | 120 | – | K/W (Typical socket mount) |
Source-Drain Diode Ratings & Characteristics
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| IS | Continuous Source Current (Body Diode) | – | – | 1.7 | A |
| ISM | Pulse Source Current (Body Diode) | – | – | 14 | A |
| VSD | Diode Forward Voltage | – | – | 1.6 | V (TJ = 25°C, IS = 1.7A, VGS = 0V) |
| trr | Reverse Recovery Time | 41 | 86 | 190 | ns (TJ = 25°C, IF = 7.2A, dIF/dt = 100A/μs) |
| QRR | Reverse Recovered Charge | 0.15 | 0.33 | 0.78 | μC |
Applications
- Computer mainboards and peripheral circuit boards.
- Printers and office automation equipment.
- Telecommunications infrastructure and networking hardware.
- Consumer electronics and general-purpose power switching products.
Package Content
- 1 x IRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4