K538 N-Channel MOSFET Transistor 900V 3A 100W TO-3P

2sK538 N-Channel MOSFET Transistor

• Type Designator: 2SK538
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 100 W
• Maximum Drain-Source Voltage |Vds|: 900 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Drain Current |Id|: 3 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 55 nS
• Drain-Source Capacitance (Cd): 120 pF
• Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm

2SK538 Datasheet