LMUN2132LT1G 15@5.0mA,10V 246mW 100mA 50V SOT-23 Digital Transistors SMD
he LMUN2132LT1G, manufactured by Leshan Radio Company, is a PNP digital transistor with integrated bias resistors R1 and R2, both nominally 4.7 kΩ, housed in a compact SOT-23 surface-mount package. This Bias Resistor Transistor combines a single PNP transistor with a monolithic bias resistor network, eliminating the need for external resistors in circuit designs. It is optimized for low-power applications, offering simplified circuit design, reduced board space, and fewer components. The device is suitable for switching applications in various electronic systems, with a maximum collector-emitter voltage of 50V and a collector current of up to 100mA.
Features:
- Integrated bias resistors: R1 = 4.7 kΩ, R2 = 4.7 kΩ.
- PNP silicon transistor.
- SOT-23 surface-mount package.
- Simplifies circuit design by reducing external components.
- Minimizes board space.
- Modified gull-winged leads for thermal stress absorption.
Pinout:
Specifications:
| Package | SOT-23 | |
| Operating Temperature | -55℃~+150℃ |
|
| DC Current Gain | 15@5.0mA,10V |
|
| Output Voltage(VO(on)) | 200mV |
|
| Input Resistor | 6.1kΩ |
|
| Resistor Ratio | – |
|
| type | – |
|
| Pd – Power Dissipation | 246mW |
|
| Current – Collector(Ic) | 100mA |
|
| Collector – Emitter Voltage VCEO | 50V |
Applications:
- Interface/driving of digital logic signals to loads.
- General-purpose switching in microcontroller I/O, signal level shifting.
- High-side switching or sourcing currents in battery-powered and embedded systems.
- Lamp/indicator drivers, sensor or bus interface circuits.
- Industrial or automotive controls.
