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MJ900 PNP Darlington Transistor TO-3

MJ900 is a PNP Darlington silicon power transistor in TO-3 package rated for 60V, 8A, and 90W applications.

75.00 EGP

In stockSKU 3496300141425
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MJ900 PNP Darlington Transistor TO-3

The MJ900 PNP Darlington Transistor TO‑3 is a high‑power bipolar transistor designed for use in power linear and switching applications where robust current handling and high gain are required. It combines two PNP transistor stages in a monolithic Darlington configuration to deliver high current amplification with a minimal base drive requirement. The TO‑3 metal case provides excellent heat dissipation and mechanical stability, making the MJ900 suitable for demanding power circuits and industrial environments.

Features:
  • PNP Darlington configuration for very high current gain.
  • Minimum hFE = 1000 at Ic = -3A.
  • Low collector saturation voltage.
  • High collector current capability up to -8A.
  • Excellent power dissipation of 90W.
  • Rugged TO-3 metal package for better heat transfer.
  • Designed for complementary amplifier output stages.
Specifications:
Parameter Specification
Polarity PNP
Type Silicon Darlington Power Transistor
Package TO-3 (Metal Can)
Absolute Maximum Ratings
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 8 A
Collector Power Dissipation (PC) @ Tc=25°C 90 W
Key Electrical Characteristics
Min. DC Current Gain (hFE) @ IC = 3A 1000
Max. Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 3A 2.0 V
Thermal Resistance, Junction to Case (RθJC) 1.94 °C/W
Pin Configuration:

Applications:
  • Complementary audio power amplifiers.
  • Linear voltage regulators.
  • General purpose high-power amplification.
  • Output stage in push-pull amplifier circuits.
  • Industrial control systems.
Package Include:

1x MJ900 PNP Darlington Transistor TO-3

Datasheet:

MJ900

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