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MJ900 PNP Darlington Transistor TO-3
MJ900 is a PNP Darlington silicon power transistor in TO-3 package rated for 60V, 8A, and 90W applications.
75.00 EGP
In stockSKU 3496300141425
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MJ900 PNP Darlington Transistor TO-3
The MJ900 PNP Darlington Transistor TO‑3 is a high‑power bipolar transistor designed for use in power linear and switching applications where robust current handling and high gain are required. It combines two PNP transistor stages in a monolithic Darlington configuration to deliver high current amplification with a minimal base drive requirement. The TO‑3 metal case provides excellent heat dissipation and mechanical stability, making the MJ900 suitable for demanding power circuits and industrial environments.
Features:
- PNP Darlington configuration for very high current gain.
- Minimum hFE = 1000 at Ic = -3A.
- Low collector saturation voltage.
- High collector current capability up to -8A.
- Excellent power dissipation of 90W.
- Rugged TO-3 metal package for better heat transfer.
- Designed for complementary amplifier output stages.
Specifications:
| Parameter | Specification |
|---|---|
| Polarity | PNP |
| Type | Silicon Darlington Power Transistor |
| Package | TO-3 (Metal Can) |
| Absolute Maximum Ratings | |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Continuous Collector Current (IC) | 8 A |
| Collector Power Dissipation (PC) @ Tc=25°C | 90 W |
| Key Electrical Characteristics | |
| Min. DC Current Gain (hFE) @ IC = 3A | 1000 |
| Max. Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 3A | 2.0 V |
| Thermal Resistance, Junction to Case (RθJC) | 1.94 °C/W |
Pin Configuration:

Applications:
- Complementary audio power amplifiers.
- Linear voltage regulators.
- General purpose high-power amplification.
- Output stage in push-pull amplifier circuits.
- Industrial control systems.
Package Include:
1x MJ900 PNP Darlington Transistor TO-3







