MPSA12 NPN Darlington Transistor
MPSA12 NPN Darlington transistor with very high current gain and 20 V rating in a TO‑92 through‑hole package, ideal for high‑gain switching and amplification
2.50 EGP
In stockSKU 3496300141654
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MPSA12 NPN Darlington Transistor
The MPSA12 NPN Darlington Transistor is a silicon planar NPN bipolar transistor arranged in a Darlington configuration to deliver exceptionally high current gain for switching and amplification tasks in electronic designs. This transistor is engineered to provide robust performance in circuits where a high input impedance and substantial current amplification are essential. Its Darlington pair architecture internally combines two transistors, achieving a typical DC current gain (hFE) of up to 20,000 at IC = 10 mA, VCE = 5 V, making it suited for applications requiring significant gain with minimal base drive.
Features:
- Darlington configuration for amplified current handling in a single package.
- Low leakage currents ensuring efficient off-state operation.
- Compact TO-92 package for easy through-hole integration.
- Wide operating temperature range for environmental resilience.
Specifications:
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage | 20VDC |
| Collector-Base Voltage | 20VDC |
| Emitter-Base Voltage | 10VDC |
| Collector Current – Continuous | 1.2ADC |
| Total Device Dissipation @ TA=25°C | 625mW |
| Derate above 25°C (Ambient) | 5mW/°C |
| Operating and Storage Temperature Range | -55°Cto+150°C |
| Thermal Resistance, Junction to Ambient | 200°C/W |
| Thermal Resistance, Junction to Case | 83.3°C/W |
| DC Current Gain (IC=10mADC, VCE=5VDC) | 20000(min) |
| Collector-Emitter Saturation Voltage (IC=10mADC, IB=0.01mADC) | 1.0VDC(max) |
| Base-Emitter On Voltage (IC=10mADC, VCE=5VDC) | 1.4VDC(typ) |
| Collector Cutoff Current (VCB=15VDC, IE=0) | 100nADC(max) |
| Emitter Cutoff Current (VEB=10VDC, IC=0) | 100nADC(max) |
Pin Configuration:
Footprint:
Application:
- Driving relays, solenoids, and lamps from low-current sources.
- Sensor signal amplification in detection circuits.
- Interface between microcontrollers and higher-power loads.
- Switching in power supply control modules.
- High-gain stages in low-frequency amplifiers.
- Battery-operated devices requiring efficient current control.
Package Include:
1x MPSA12 NPN Darlington Transistor.
Datasheet:
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